Time-dependent dielectric-constant increase reliability issue for low dielectric-constant materials

被引:8
|
作者
Ryuzaki, D [1 ]
Ishida, T [1 ]
Furusawa, T [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
关键词
D O I
10.1149/1.1621415
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The stability of low dielectric-constant (low-k) materials during electric-field stress was studied. The dielectric constants (k-values) were found to increase sharply under bias-temperature stress. This time-dependent dielectric-constant increase (TDDI) was estimated for a practical operating condition by extrapolation. The extrapolated TDDI lifetimes and k-value increases for tested materials (k = 2.3-3.2) ranged from 30 days to 1,000 years and from 0 to 23%, respectively. Considering the estimated TDDI, new criteria for reliable low-k materials are proposed. The criteria were used successfully to identify those low-k materials that show high stability during electric-field stress. (C) 2003 The Electrochemical Society.
引用
收藏
页码:F203 / F205
页数:3
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