ZnTe:N back contacts to CdS/CdTe solar cells

被引：11

作者：

Makhratchev, K ^{[1
]}

Price, KJ ^{[1
]}

Ma, X ^{[1
]}

Simmons, DA ^{[1
]}

Drayton, J ^{[1
]}

Ludwig, K ^{[1
]}

Gupta, A ^{[1
]}

Bohn, RG ^{[1
]}

Compaan, AD ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915874

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report the development of nitrogen-doped ZnTe back contacts for CdS/CdTe solar cells. Reproducible p-type doping of the ZnTe was achieved by reactive RF magnetron sputtering with Ar/N-2 gas mixtures. The conductivity of the doped films was about five orders of magnitude higher than that of intrinsic ZnTe sputtered films. These films were used as contacts for glass/SnO2/CdS/CdTe solar cells. The contact structure of ZnTe/ZnTe:N/Ni showed slightly lower initial performance but improved stability compared to our evaporated Cu/Au contacts for a 3000 hr test cycle at 100 degreesC.

引用

页码：475 / 478

页数：4

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