Polarization-dependent refractive-index change induced by superlattice disordering

被引：11
|
作者：
Suzuki, Y
Iwamura, H
Miyazawa, T
Wakatsuki, A
Mikami, O
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-Shi, Kanagawa Pref.
[2] Tokai University, Hiratsuka-Shi, Kanagawa Pref., 1117, Kitakaname
[3] University of Tokyo, Tokyo
[4] Musashino Elec. Commun. Laboratories, Nippon Telegraph and Tel. Pub. Corp., Tokyo
[5] NTT Optoelectronics Laboratories, Atsugi
[6] Japan Society of Applied Physics, Inst. Electronics
[7] NTT Optoelectronics Laboratory, Atsugi
[8] University of Tohoku, Sendai
[9] Yokosuka Electrial Commun. Labs., Nippon Telegraph and Tel. Corp., Yokosuka
[10] NTT Opto-electronics Laboratories, Atsugi
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 11期
关键词：
D O I：
10.1109/3.541678
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model of the polarization-dependent refractive-index change that accompanies superlattice disordering is proposed for the first time. Calculated results agree well with experimental results in terms of the amount and direction of the refractive-index changes. In the GaAs-AlAs system, a simple diffusion model that considers the diffusion of group III atoms explains the experimental results. In a InGaAs-InP system, it is assumed that group V atoms mainly induce disordering, and the difference between the diffusion constant in wells and that in barriers is taken into account. The refractive-index changes induced by superlattice disordering are useful for fabricating polarization control devices and integrated optical circuits.
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页码：1922 / 1931
页数：10
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