Lithographic technologies that haven't (yet) made it; lessons learned
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作者:
Pease, RF
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机构:
Stanford Univ, Stanford, CA 94305 USAStanford Univ, Stanford, CA 94305 USA
Pease, RF
[1
]
机构:
[1] Stanford Univ, Stanford, CA 94305 USA
来源:
Advances in Resist Technology and Processing XXII, Pt 1 and 2
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2005年
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5753卷
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暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Since the introduction of the integrated circuit we have been inventing ways to extend the feature resolution beyond the optical limit. Using a focused electron beam linewidths of less than 100nm were demonstrated in 1960 and a mere three years later we achieved a 10nm feature. In the 1970's and 80's several semiconductor manufacturers undertook programs to introduce electron beam lithography (EBL) and X-ray lithography (XRL) based primarily on the rationale that both had superior resolution. Those programs consumed many millions of dollars and yielded, and continue to yield, very imaginative systems but have failed to displace deep ultraviolet lithography (DUVL) despite its inferior resolution. One lesson learned is an old one: to displace an established technology the new must be I Ox better than the old. Thus it is irrational that even today a form of XRL employing 13nm X-rays is still being pursued despite showing performance inferior to that of DUVL. What constitutes 'better' depends on the application and thus there are niche markets for forms of lithography other than DUVL. But for mainstream semiconductor chip manufacturing there is no prospect within the next decade of displacing optical lithography which can be stretched even to 10mn features by applying novel techniques coupled with massive computation.
机构:
Saxon Glass Technol Inc, Alfred, NY 14802 USA
Alfred Univ, Alfred, NY 14802 USASaxon Glass Technol Inc, Alfred, NY 14802 USA
Varshneya, Arun K.
Macrelli, Guglielmo
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机构:
Isoclima SpA, R&D Dept, Via Alessandro Volta 14, Este, PD, ItalySaxon Glass Technol Inc, Alfred, NY 14802 USA
Macrelli, Guglielmo
Yoshida, Satoshi
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机构:
AGC Inc, Mat Integrat Labs, Inorgan Mat Div, Tsurumi Ku, Yokohama, Kanagawa, JapanSaxon Glass Technol Inc, Alfred, NY 14802 USA
Yoshida, Satoshi
Kim, Seong H.
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机构:
Penn State Univ, Dept Chem Engn, University Pk, PA 16802 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USASaxon Glass Technol Inc, Alfred, NY 14802 USA
Kim, Seong H.
Ogrinc, Andrew L.
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机构:
Penn State Univ, Dept Chem Engn, University Pk, PA 16802 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USASaxon Glass Technol Inc, Alfred, NY 14802 USA
Ogrinc, Andrew L.
Mauro, John C.
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机构:
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USASaxon Glass Technol Inc, Alfred, NY 14802 USA
机构:
Univ Western Australia, UWA Med Sch, Urol, Perth, WA, Australia
Fiona Stanley Hosp, Urol, Murdoch, WA, AustraliaUniv Western Australia, UWA Med Sch, Urol, Perth, WA, Australia