Multicharged ion-implantation processing at formation of wells and metallization of submicron structures of the LSI circuits

In a given paper, we present a result of the study of the CMOS structures with different technologies of wells' formation for CMOS structures in submicron integrated circuit technology. As the results of investigation, the high manufacturability is revealed for the CMOS fabrication on the base of retrograde n- and p-type wells of epitaxial silicon structures with a channel length of MOS transistor in a range of 0.5-1 mu m and a distance between the different types of regions in a range of 2-3 mu m. The doping influence of the multicharged aluminium ions is explored. The high corrosion stability and high rupture efforts with a given method are determined.