Pb loss in Pb(Zr,Ti)O3 ceramics observed by in situ ionic conductivity measurements

被引:38
|
作者
Donnelly, Niall J. [1 ]
Randall, Clive A. [1 ]
机构
[1] Penn State Univ, Mat Res Inst, Ctr Dielect Studies, University Pk, PA 16802 USA
关键词
INTRINSIC NONSTOICHIOMETRY; OXYGEN INCORPORATION; POINT-DEFECTS; LEAD; VAPORIZATION; DEGRADATION; TRANSPORT;
D O I
10.1063/1.3585831
中图分类号
O59 [应用物理学];
学科分类号
摘要
Analysis of the impedance spectra of Nb-doped Pb(Zr,Ti)O-3 (PZT) embedded capacitors revealed that the ionic conductivity increased monotonically during annealing at 700 degrees C. Furthermore, the rate of increase was lowered by a reduction in the ambient pO(2). The results could be explained by a model in which oxygen vacancies are generated as a consequence of Pb evaporation from the PZT. At 700 degrees C, this process is most likely limited by surface kinetics rather than Pb bulk diffusion. It was shown that the Pb loss could be completely recovered by annealing in a high activity Pb source with a commensurate reduction in oxygen vacancy concentration. The electronic conductivity was predominantly p-type and was relatively unaffected by the Pb loss throughout the course of the, experiment. (C) 2011 American Institute of Physics. [doi:10.1063/1.3585831]
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页数:6
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