P-type conducting ZnO: fabrication and characterisation

被引：41
|
作者：
Kaminska, E [1 ]
Piotrowska, A [1 ]
Kossut, J [1 ]
Butkute, R [1 ]
Dobrowolski, W [1 ]
Lukasiewicz, R [1 ]
Barcz, A [1 ]
Jakiela, R [1 ]
Dynowska, E [1 ]
Przezdziecka, E [1 ]
Aleszkiewicz, M [1 ]
Wojnar, P [1 ]
Kowaczyk, E [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期
关键词：
D O I：
10.1002/pssc.200460659
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the fabrication of ZnO:N by thermal oxidation of sputter-deposited zinc nitride. Through optimising several technological steps we achieved p-type conductivity with carrier concentration in mid 10(17) cm(-3) range and mobility of similar to 10 cm(2)/Vs. PL spectra of p-type ZnO:N films show a sharp peak at 3.36 eV, most likely due to neutral acceptor bound excitons. The transmittance of p-ZnO:N in the whole visible spectrum is similar to 80% making it suitable for transparent electronics. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.
引用
收藏
页码：1119 / 1124
页数：6
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