Photo-induced crystallization in amorphous GeSe2 studied by Raman scattering

被引:9
|
作者
Wang, Y
Matsuda, O
Inoue, K
Murase, K
机构
[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 560, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan
关键词
Raman scattering; amorphous GeSe2; crystallization;
D O I
10.1016/S0022-3093(98)00193-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The structural difference, due to different preparation methods, in glassy GeSe2 samples is investigated by photo-induced crystallization phenomena using time-resolved Raman measurement. Crystallization temperatures of two samples, which were cooled from melts at different cooling rates, were almost the same in thermal crystallization processes. However, in photo-induced crystallization processes, threshold temperatures of the crystallization directly depended on their cooling rates, the smaller cooling rate the lower the threshold temperature. In the sample cooled at a smaller cooling rate, its medium-range structure is more similar to crystalline nuclei, or easier to transform into crystalline nuclei. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:728 / 731
页数:4
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