Insulator-conductor transition in doped HTS as a consequence of -U-centers generation

被引：1

作者：

Ivanenko, O ^{[1
]}

Mitsen, K ^{[1
]}

机构：

[1] PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 1998年 / 12卷 / 29-31期

关键词：

D O I：

10.1142/S021797929800212X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is supposed that the transition from insulator to metal state under doping in high-T-c superconductors (HTS) passes through the stage of -U-centers formation, which arise on the neighbor Cu ions when the definite spatial arrangement of the doping atoms is realized, In this doping region the free hole carriers (just as in hole-, so in electron-doped HTS) are generated when electron pairs transfer from the oxygen band into -U-centers.

引用

页码：3095 / 3098

页数：4

共 33 条

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