High-performance low-cost indium phosphide MMICs for commercial wireless applications

被引：0
|
作者：
Streit, D [1 ]
Oki, A [1 ]
Lai, R [1 ]
Medvedev, V [1 ]
Kobayashi, K [1 ]
机构：
[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA
来源：
1999 IEEE MTT-S SYMPOSIUM ON TECHNOLOGIES FOR WIRELESS APPLICATIONS DIGEST | 1999年
关键词：
D O I：
10.1109/MTTTWA.1999.755171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe a high-volume InP-based HEMT and HBT production line that produces both monolithic microwave and millimeter-wave circuits for wireless applications. Products as diverse as 900 MHz InP HBT cellular power amplifiers and 155 GHz InP HEMT low noise amplifiers are manufactured on the same fab lne, modeled after our successful GaAs HEMT and HBT fab line. These products have found acceptance in both high volume commercial wireless applications as well as more specialized millimeter wave applications.
引用
收藏
页码：253 / 256
页数：4
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