Phase-Change Memory Devices Operative at 100 °C

被引：6

作者：

Kao, K. F. ^{[1
]}

Chu, Y. C. ^{[1
]}

Chen, F. T. ^{[2
]}

Tsai, M. J. ^{[2
]}

Chin, T. S. ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] ITRI, EOL, Hsinchu 31040, Taiwan

[3] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Elevated-temperature operation; endurance; Ga-Te-Sb alloys; phase-change memory (PCM); thermal stability;

D O I：

10.1109/LED.2010.2050190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase-change memory (PCM), although promising operative at room temperature, is struggling to achieve ten-year data retention over 100 degrees C. We disclose here that a PCM device made of the composition Ga25Te8Sb67 exhibits normal operation at 100 degrees C for an endurance of at least 3 x 10(5) cycles. At room temperature, the endurance is at least 5 x 10(6) cycles. The set-reset speed of the devices reaches 20 ns, and the reset current is around 20% less than that of our reference test cells made of the benchmark Ge2Sb2Te5

引用

页码：872 / 874

页数：3

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