High-resolution transmission electron microscopy study of luminescent anodized amorphous silicon

被引：11
|
作者：
Bustarret, E [1 ]
Sauvain, E [1 ]
Ligeon, M [1 ]
机构：
[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHER,FRANCE
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1997年 / 75卷 / 01期
关键词：
D O I：
10.1080/095008397179895
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High resolution transmission electron microscopy revealed luminescent anodized hydrogenated silicon to be porous on a 3-5 nm scale and still fully amorphous, in contrast with the nanocrystalline character of anodized c-Si wafers processed and observed under similar conditions. These experimental findings strengthened our claim that crystallinity is not a requirement for visible photoluminescence to occur at room-temperature in silicon-based nanostructures.
引用
收藏
页码：35 / 42
页数：8
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