Stimulated terahertz stokes emission of silicon crystals doped with antimony donors -: art. no. 037404

被引：46
|
作者：
Pavlov, SG [1 ]
Hübers, HW
Hovenier, JN
Klaassen, TO
Carder, DA
Phillips, PJ
Redlich, B
Riemann, H
Zhukavin, RK
Shastin, VN
机构：
[1] DLR, German Aerosp Ctr, Inst Planetary Res, D-12489 Berlin, Germany
[2] Delft Univ Technol, Kavli Inst Nanosci Delft, NL-2600 GA Delft, Netherlands
[3] FOM, Inst Plasma Phys, NL-3439 MN Nieuwegein, Netherlands
[4] Inst Crystal Growth, D-12489 Berlin, Germany
[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.96.037404
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon (approximate to 2.92 THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A(1)) donor states (separation approximate to 2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.
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页数：4
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