Stimulated terahertz stokes emission of silicon crystals doped with antimony donors -: art. no. 037404

被引：46

作者：

Pavlov, SG ^{[1
]}

Hübers, HW

Hovenier, JN

Klaassen, TO

Carder, DA

Phillips, PJ

Redlich, B

Riemann, H

Zhukavin, RK

Shastin, VN

机构：

[1] DLR, German Aerosp Ctr, Inst Planetary Res, D-12489 Berlin, Germany

[2] Delft Univ Technol, Kavli Inst Nanosci Delft, NL-2600 GA Delft, Netherlands

[3] FOM, Inst Plasma Phys, NL-3439 MN Nieuwegein, Netherlands

[4] Inst Crystal Growth, D-12489 Berlin, Germany

[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.96.037404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon (approximate to 2.92 THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A(1)) donor states (separation approximate to 2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

引用

页数：4

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