Structural characterisation of titanium silicon carbide reaction

被引：22
|
作者：
Makhtari, A
La Via, F
Raineri, V
Calcagno, L
Frisina, F
机构：
[1] CNR, IMETEM, I-95121 Catania, Italy
[2] INFM, Dipartimento Fis, I-95129 Catania, Italy
[3] STMicroelect, I-95121 Catania, Italy
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 55卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(00)00470-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Interfacial reaction and phase formation as a function of annealing temperature (900, 950 and 1000 degreesC) and times were investigated on titanium thin films evaporated on n-type 6H-SiC (0001) substrate. The study was carried out employing a combination of Rutherford backscattering spectrometry, X-ray diffraction and sheet resistance measurements. At 900 degreesC a double layer of TiC and Ti5Si3 phases was formed and it was found to be stable up to 7 h of annealing. The ternary phase Ti3SiC2 appeared at 950 degreesC with a small fraction, after an annealing for 45 min. At 1000 degreesC there is a strong presence of this phase in conjunction with the Ti5Si3 phase. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：375 / 381
页数：7
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