Improved performance of trench power MOSFET with SiGeC-based channel

被引：4
|
作者：
Wang, Ying [1 ]
Hu, Hai-fan [1 ]
Cheng, Chao [1 ]
机构：
[1] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 02期
基金：
黑龙江省自然科学基金;
关键词：
SUBSTITUTIONAL CARBON; BAND-GAP; GROWTH; SI; DEPENDENCE; ALLOYS;
D O I：
10.1016/j.microrel.2010.07.149
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The models applicable for the SiGeC-channel trench MOSFET (SGCT) are presented and the improved device characteristics by incorporation smaller-sized carbon atoms substitution into the SiGe system are simulated and analyzed. Simulation results show that SiGeC alloy is a promising channel material for power trench MOSFET application. SGCT owns better I-Ds-V-Ds characteristic, higher saturated current, lower On-state resistance and bigger breakdown voltage compared to the trench MOSFET devices with SiGe-channel. The stability structure works well and the performance of SGCT is improved by C incorporation though the investigated simulations of On-state resistance and breakdown voltage in different temperatures. (C) 2010 Published by Elsevier Ltd.
引用
收藏
页码：376 / 380
页数：5
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