Improved performance of trench power MOSFET with SiGeC-based channel

被引：4
|
作者：
Wang, Ying [1 ]
Hu, Hai-fan [1 ]
Cheng, Chao [1 ]
机构：
[1] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 02期
基金：
黑龙江省自然科学基金;
关键词：
SUBSTITUTIONAL CARBON; BAND-GAP; GROWTH; SI; DEPENDENCE; ALLOYS;
D O I：
10.1016/j.microrel.2010.07.149
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The models applicable for the SiGeC-channel trench MOSFET (SGCT) are presented and the improved device characteristics by incorporation smaller-sized carbon atoms substitution into the SiGe system are simulated and analyzed. Simulation results show that SiGeC alloy is a promising channel material for power trench MOSFET application. SGCT owns better I-Ds-V-Ds characteristic, higher saturated current, lower On-state resistance and bigger breakdown voltage compared to the trench MOSFET devices with SiGe-channel. The stability structure works well and the performance of SGCT is improved by C incorporation though the investigated simulations of On-state resistance and breakdown voltage in different temperatures. (C) 2010 Published by Elsevier Ltd.
引用
收藏
页码：376 / 380
页数：5
相关论文
共 50 条
  • [1] Modeling and Simulation of power trench MOSFET with SiGeC-based channel
    Wang, Ying
    Hu, Hai-fan
    Cheng, Chao
    EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 164 - 167
  • [2] A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance
    Saxena, Raghvendra Sahai
    Kumar, M. Jagadesh
    NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 602 - +
  • [3] Simulation of a Lateral Trench Power MOSFET on InGaAs for improved performance
    Payal, Mohit
    Singh, Yashvir
    2014 RECENT ADVANCES IN ENGINEERING AND COMPUTATIONAL SCIENCES (RAECS), 2014,
  • [4] Performance of Trench Power MOSFET With Strained Si/SiGe Multilayer Channel
    Sun, Shan
    Yuan, Jiann-Shiun
    Shen, Z. John
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) : 1517 - 1522
  • [5] Low-frequency noise in SiGeC-based pMOSFETs
    Deen, MJ
    Marinov, O
    Onsongo, D
    Dey, S
    Banerjee, S
    NOISE IN DEVICES AND CIRCUITS II, 2004, 5470 : 215 - 225
  • [6] A Lateral Power p-Channel Trench MOSFET Improved by Variation Vertical Doping
    Cheng, Junji
    Wu, Shiying
    Yi, Bo
    Huang, Haimeng
    Wang, Zhiming
    Zhang, Guoyi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 2138 - 2141
  • [7] A Lateral Trench Dual Gate Power MOSFET on Thin SOI for Improved Performance
    Singh, Yashvir
    Punetha, Mayank
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (07) : Q113 - Q117
  • [8] A heterojunction-based SiC power double trench MOSFET with improved switching performance and reverse recovery
    Yang, Tongtong
    Wang, Yan
    Yue, Ruifeng
    SUPERLATTICES AND MICROSTRUCTURES, 2020, 140
  • [9] A P-Channel Power MOSFET with a Trench Structure
    Mitsubishi Denki Giho, 71 (03):
  • [10] A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance
    Saxena, Raghvendra S.
    Kumar, M. Jagadesh
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (06) : 1355 - 1359
12345