Ultrasonic characterization of microwave joined silicon carbide/silicon carbide

被引：0

作者：

House, MB ^{[1
]}

Day, PS ^{[1
]}

机构：

[1] Lockheed Martin Corp, Schenectady, NY 12301 USA

来源：

NONDESTRUCTIVE EVALUATION OF CERAMICS | 1998年 / 89卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High frequency (50-150 MHz), ultrasonic immersion testing has been used to characterize the surface and interfacial joint conditions of microwave bonded, monolithic silicon carbide (SiC) materials. The high resolution ultrasonic C-scan images point to damage accumulation after thermal cycling. Image processing was used to study the effects of the thermal cycling on waveform shape, amplitude and distribution. Such information is useful for concurrently engineering material fabrication processes and suitable nondestructive test procedures.

引用

页码：137 / 144

页数：8

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