Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

被引:5
|
作者
Menendez-Proupin, E
Pena, JL
Trallero-Giner, C
机构
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Merida 97310, Yucatan, Mexico
[2] Univ La Habana, Dept Fis Teor, Vedado 10400, La Habana, Cuba
[3] Inst Politecn Nacl, Ctr Invest Ciencia Aplicada & Technol Avanzada, Dept Fis, Mexico City 11500, DF, Mexico
关键词
D O I
10.1088/0268-1242/13/8/007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resonant Raman scattering in spherical semiconductor quantum dots is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) uncorrelated electron-hole pairs in the strongly size-dependent quantized regime; (II) Wannier-Mott excitons in an infinite potential well; (III) excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolute values of the scattering intensities and substantially modify the Raman lineshape, even in the strong confinement regime.
引用
收藏
页码:871 / 875
页数:5
相关论文
共 50 条
  • [21] POLARON EFFECTS IN EXCITON MEDIATED RESONANT RAMAN-SCATTERING
    LOTTICI, PP
    SOLID STATE COMMUNICATIONS, 1976, 19 (11) : 1137 - 1140
  • [22] Resonant Raman scattering on self-assembled GaN quantum dots
    Kuball, M
    Gleize, J
    Tanaka, S
    Aoyagi, Y
    APPLIED PHYSICS LETTERS, 2001, 78 (07) : 987 - 989
  • [23] Temporal evolution of resonant Raman-scattering in ZnCdSe quantum dots
    Kaschner, A
    Strassburg, M
    Hoffmann, A
    Thomsen, C
    Bartels, M
    Lischka, K
    Schikora, D
    APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2662 - 2664
  • [24] Probing microstructures of molybdenum disulfide quantum dots by resonant Raman scattering
    Bai, Ruipeng
    Wang, Peijie
    Fang, Yan
    APPLIED PHYSICS LETTERS, 2017, 110 (16)
  • [25] Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots
    A. G. Milekhin
    A. I. Nikiforov
    O. P. Pchelyakov
    A. G. Rodrigues
    J. C. Galzerani
    D. R. T. Zahn
    Journal of Experimental and Theoretical Physics Letters, 2005, 81 : 30 - 33
  • [26] Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots
    Milekhin, AG
    Nikiforov, AI
    Pchelyakov, OP
    Rodrigues, AG
    Galzerani, JC
    Zahn, DRT
    JETP LETTERS, 2005, 81 (01) : 30 - 33
  • [27] INFLUENCE OF THE EXCITON LIFETIME ON RESONANT RAMAN-SCATTERING IN QUANTUM-WELLS
    SHIELDS, AJ
    CARDONA, M
    NOTZEL, R
    PLOOG, K
    PHYSICAL REVIEW B, 1992, 46 (16) : 10490 - 10493
  • [28] Determination of the exciton binding energy in ZnCdSe quantum wells by resonant Raman scattering
    Hernández-Ramírez, LM
    Hernández-Calderón, I
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 220 (01): : 205 - 208
  • [29] EXCITON-MEDIATED RAMAN SCATTERING IN ONE-DIMENSIONAL QUANTUM DOTS
    Sun, Hai-Chao
    Liu, Cui-Hong
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (32): : 4387 - 4393
  • [30] Exciton related resonant Raman scattering from CdSe quantum dots in an amorphous GeS2 thin film matrix
    Raptis, C
    Nesheva, D
    Boulmetis, YC
    Levi, Z
    Aneva, Z
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (46) : 8221 - 8232