Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices

被引：2

作者：

Davydov, VY ^{[1
]}

Smirnov, AN ^{[1
]}

Goncharuk, IN ^{[1
]}

Kyutt, RN ^{[1
]}

Scheglov, MP ^{[1
]}

Baidakova, MV ^{[1
]}

Lundin, WV ^{[1
]}

Zavarin, EE ^{[1
]}

Smirnov, MB ^{[1
]}

Karpov, SV ^{[1
]}

Harima, H ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

nitride semiconductors; superlattices; acoustic and optic phonons; Raman spectroscopy;

D O I：

10.1117/12.511838

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

It is shown that such parameters of GaN/AlxGa1-xN superlattice as the period, build-in strain, composition of the alloy, and individual layer thicknesses can be extracted from the energy positions, intensities, and line shapes of various optical and acoustical modes detected in Raman scattering.

引用

页码：146 / 149

页数：4

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