Fabrication and photoluminescence properties of highly ordered ZnS nanowire arrays embedded in anodic alumina membrane

被引：28
|
作者：
Chang, Ming [1 ]
Cao, Xue Li [1 ]
Xu, Xi-Jin [1 ]
Zhang, Lide [1 ]
机构：
[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
来源：
PHYSICS LETTERS A | 2008年 / 372卷 / 03期
关键词：
D O I：
10.1016/j.physleta.2007.07.031
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
ZnS nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated from an electrolyte containing ZnCl2 and elemental S in dimethylsulfoxide. Photoluminescence (PL) measurements show a broadband with three peaks centered at about 353, 425, and 520 nm that are attributed to vacancies or interstitial, sulfur vacancy, and point defects respectively. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：273 / 276
页数：4
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