The structural and dielectric properties of sandwiched PZT thin films

被引：0
|
作者：
Nam, Sung-Pill [1 ]
Lee, Sung-Gap [2 ]
Bae, Seong-Gi [3 ]
Lee, Young-Hie [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Mat Engn, Wolgye Dong, Seoul 139701, South Korea
[2] Gyeongsang Natl Univ, Jinju, South Korea
[3] Univ Incheon, Inchon, South Korea
来源：
IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS | 2006年
关键词：
sandwich; thinfilm; dielectric property; ferroelectric; MPB;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The sandwiched Pb-1.1(Zr0.4Ti0.6)O-3/Pb-1.1(Zr0.6Ti0.4)O-3/ Pb-1.1(Zr0.4Ti0.(6))O-3 [PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of sandwished PZT thin films. All sandwiched PZT thin films show dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization and leakage current density of the sandwich PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the sandwiched PZT thin film annealed at 650 degrees C were 913, 3.06%, 15.2 mu C/cm(2) and 2.57 x 10(-9) A/cm(2) at 5 V. This study suggests that the design of the sandwiched PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.
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页码：632 / +
页数：2
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