Influence of irradiation on the switching behavior in PZT thin films

被引：18
|
作者：
Baturin, I
Menou, N
Shur, V
Muller, C
Kuznetsov, D
Hodeau, JL
Sternberg, A
机构：
[1] Ural State Univ, Ferroelect Lab, Ekaterinburg 620083, Russia
[2] Univ Toulon & Var, UMR CNRS 6137, L2MP, F-83957 La Garde, France
[3] CNRS, Cristallog Lab, F-38042 Grenoble, France
[4] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 120卷 / 1-3期
关键词：
PZT; thin films; X-ray irradiation; structural properties; electric properties; ferroelectrics;
D O I：
10.1016/j.mseb.2005.02.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O-3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1 1 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：141 / 145
页数：5
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