Sensitivity study of multilayer thin-film bulk acoustic resonator for mass sensor application

被引:1
|
作者
Liu, Haiqiang [1 ]
Li, Fang [2 ]
Qin, Lifeng [1 ]
Wang, Qing-Ming [3 ]
机构
[1] Xiamen Univ, Dept Mech & Elect Engn, Xiamen 361005, Peoples R China
[2] New York Inst Technol, Dept Mech Engn, Old Westbury, NY 11568 USA
[3] Univ Pittsburgh, Dept Mech Engn & Mat Sci, Pittsburgh, PA 15261 USA
基金
美国国家科学基金会;
关键词
BIOSENSING APPLICATIONS; FBAR DEVICES; COMPENSATION; TEMPERATURE;
D O I
10.1063/1.4965717
中图分类号
O59 [应用物理学];
学科分类号
摘要
The sensitivity of multilayer thin-film bulk acoustic resonators (MTFBARs) used as mass sensors is investigated. MTFBAR sensors with the structure of a mass-sensitive layer/electrode layer/piezo layer/electrode layer were used. Two methods, one using electric impedance and the other displacement, were adopted for the determination of sensitivity. Simulation results show that the two methods agree well, and the characteristic acoustic impedance and thickness of the non-piezo layers strongly affect mass sensitivity. It was found that high acoustic impedance in the non-piezo layer is not helpful for sensitivity improvement. Sensitivity is improved by choosing an appropriate thickness for the low acoustic impedance non-piezo layer, and the maximum sensitivity can be obtained by choosing suitable thickness combinations for the layers. Moreover, it was found that MTFBAR quality factor and sensitivity are simultaneously improved by adopting a high-quality-factor non-piezo layer with low acoustic impedance for an air working environment, whereas a balance between quality factor and sensitivity is found through optimization of the non-piezo layers for a water working environment. These results can be used for the design and application of MTFBAR mass sensors. Published by AIP Publishing.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] ZnO based film bulk acoustic resonator as infrared sensor
    Wang, Ziyu
    Qiu, Xiaotun
    Chen, Shih Jui
    Pang, Wei
    Zhang, Hao
    Shi, Jing
    Yu, Hongyu
    THIN SOLID FILMS, 2011, 519 (18) : 6144 - 6147
  • [42] Design and simulation of Film Bulk Acoustic Wave Resonator (FBAR) Gas Sensor Based on ZnO Thin Film
    Sabani, Zarifsofia
    Ralib, Aliza Aini Md
    Karim, Jamilah
    Saidin, Norazlina Bt
    Razali, Nur Fatin Binti Mohamad
    PROCEEDINGS OF THE 2019 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM), 2019, : 34 - 37
  • [43] Simulation and fabrication of thin film bulk acoustic wave resonator
    韩茜茜
    欧毅
    李志刚
    欧文
    陈大鹏
    叶甜春
    Journal of Semiconductors, 2016, (07) : 90 - 95
  • [44] Thin film bulk acoustic wave resonator and filter technology
    Lakin, KM
    McCarron, KT
    Belsick, J
    McDonald, JF
    RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2001, : 89 - 92
  • [45] Simulation and fabrication of thin film bulk acoustic wave resonator
    Han Xixi
    Ou Yi
    Li Zhigang
    Ou Wen
    Chen Dapeng
    Ye Tianchun
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (07)
  • [46] Simulation and fabrication of thin film bulk acoustic wave resonator
    韩茜茜
    欧毅
    李志刚
    欧文
    陈大鹏
    叶甜春
    Journal of Semiconductors, 2016, 37 (07) : 90 - 95
  • [47] Modeling and simulation of thin-film bulk acoustic resonators
    Zhao, Hong-Jin
    Ren, Vian-Ling
    Liu, Jian-She
    Liu, Li-Tian
    Li, Zhi-Jian
    Integrated Ferroelectrics, 2002, 50 : 81 - 89
  • [48] Electromagnetic modeling of thin-film bulk acoustic resonators
    Farina, M
    Rozzi, W
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (11) : 2496 - 2502
  • [49] Modeling and simulation of thin-film bulk acoustic resonators
    Zhao, HJ
    Ren, TL
    Liu, JS
    Liu, LT
    Li, ZJ
    INTEGRATED FERROELECTRICS, 2002, 50 : 81 - 89
  • [50] Thin-film bulk acoustic resonator RF bandpass filter design technique using genetic algorithm
    Lee, J
    Kim, H
    ELECTRONICS LETTERS, 2003, 39 (05) : 444 - 445