Comprehensive analysis of electrically-pumped GaSb-based VCSELs

被引：17

作者：

Arafin, S. ^{[1
]}

Bachmann, A. ^{[1
]}

Vizbaras, K. ^{[1
]}

Hangauer, A. ^{[1
]}

Gustavsson, J. ^{[2
]}

Bengtsson, J. ^{[2
]}

Larsson, A. ^{[2
]}

Amann, M. -C. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 18期

关键词：

ABSORPTION-SPECTROSCOPY; THERMAL-CONDUCTIVITY; CAVITY;

D O I：

10.1364/OE.19.017267

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications. (C) 2011 Optical Society of America

引用

页码：17267 / 17282

页数：16

共 50 条

[21] GaSb-based Electrically Pumped VCSEL with Buried Tunnel Junction Operating Continuous Wave up to 50°C
Bachmann, A.
Kashani-Shirazi, K.
Amann, M. -C.
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 39 - 40
[22] Optically and electrically pumped GaN-based VCSELs
Lu, T. C.
Kao, C. C.
Huang, G. S.
Kuo, H. C.
Wang, S. C.
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 987 - 988
[23] Single mode and tunable GaSb-based VCSELs for wavelengths above 2 μm
Amann, Markus-Christian
Arafin, Shamsul
Vizbaras, Kristijonas
VERTICAL-CAVITY SURFACE-EMITTING LASERS XV, 2011, 7952
[24] Towards electrically-pumped microcavity polariton lasers
Tsintzos, S.
Savvidis, P. G.
Konstantinidis, G.
Hatzopoulos, Z.
Pelekanos, N. T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 12 2008, 2008, 5 (12): : 3594 - +
[25] Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 μm
Bachmann, A.
Lim, T.
Kashani-Shirazi, K.
Dier, O.
Lauer, C.
Amann, M. -C.
ELECTRONICS LETTERS, 2008, 44 (03) : 202 - U12
[26] Electrically pumped epitaxially regrown λ > 2 μm GaSb-based photonic crystal surface emitting lasers.
Shterengas, L.
Liu, R.
Kipshidze, G.
Stein, A.
Lee, W.
Zakharov, D. N.
Kisslinger, K.
Belenky, G.
NOVEL IN-PLANE SEMICONDUCTOR LASERS XXI, 2022, 12021
[27] Electrically-pumped photonic crystal lasers for optical communications
Matsuo, S.
Takeda, K.
Sato, T.
Notomi, M.
Shinya, A.
Nozaki, K.
Taniyama, H.
Hasebe, K.
Kakitsuka, T.
2012 38TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATIONS (ECOC), 2012,
[28] Electrically-pumped VECSEL with coaxial ring tunnel junction
Walczak, J.
Wasiak, M.
Dems, M.
Sarzala, R. P.
Sirbu, A.
Kapon, E.
Czyszanowski, T.
2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014), 2014, : 171 - 172
[29] Transverse-Mode Characteristics of GaSb-Based VCSELs With Buried-Tunnel Junctions
Arafin, Shamsul
Bachmann, Alexander
Amann, Markus-Christian
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (06) : 1576 - 1583
[30] Electrically-pumped 850-nm micromirror VECSELs
Keeler, GA
Serkland, DK
Geib, KM
Peake, GM
Mar, A
Vertical-Cavity Surface-Emitting Lasers IX, 2005, 5737 : 69 - 74

← 1 2 3 4 5 →