Theoretical investigation of properties of InAsSb mid-wave infrared detectors

被引：0
|
作者：
Gomolka, Emilia [1 ]
Kopytko, Malgorzata [1 ]
Martyniuk, Piotr [1 ]
机构：
[1] Mil Univ Technol, Inst Appl Phys, 2 Urbanowicza Str, PL-00908 Warsaw, Poland
来源：
13TH CONFERENCE ON INTEGRATED OPTICS: SENSORS, SENSING STRUCTURES, AND METHODS | 2018年 / 10830卷
关键词：
Infrared detector; Barrier detector; High-operating temperature;
D O I：
10.1117/12.2503626
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this work we present the theoretical investigation of the electrical and optical properties of high operating temperature (HOT) mid-wavelength infrared detectors (5 m at 230 K) based on InAsSb/AlSb heterostructures [1]. In this work the performance comparison of barrier detectors with different doping concentration of n-type absorbing layer is presented. The barrier structure was simulated by commercially available software APSYS. We report on the dependence of the calculated current responsivity on the active layer thickness for a different doping concentration and doping concentration for optimal absorber thickness. Moreover, we show the influence of the bottom contact material on device's performance.
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页数：5
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