Absorption bleaching by stimulated emission in erbium-doped silicon-rich silicon nitride waveguides

被引：5
|
作者：
Olaosebikan, Debo [1 ]
Yerci, Selcuk [2 ,3 ]
Gondarenko, Alexander [1 ]
Preston, Kyle [1 ]
Li, Rui [2 ,3 ]
Dal Negro, Luca [2 ,3 ,4 ]
Lipson, Michal [1 ,5 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Boston Univ, Dept Elect Engn, Boston, MA 02215 USA
[3] Boston Univ, Photon Ctr, Boston, MA 02215 USA
[4] Boston Univ, Div Mat Sci & Engn, Brookline, MA 02446 USA
[5] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
来源：
OPTICS LETTERS | 2011年 / 36卷 / 01期
基金：
美国国家科学基金会;
关键词：
LASER; GAIN;
D O I：
10.1364/OL.36.000004
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Stimulated emission from sensitized erbium ions in silicon-rich silicon nitride is demonstrated by pump-probe measurements carried out in waveguides. A decrease in the photoinduced absorption of the probe at the wavelength of erbium emission is observed and is attributed to stimulated emission from erbium excited indirectly via localized states in the silicon nitride matrix. (C) 2010 Optical Society of America
引用
收藏
页码：4 / 6
页数：3
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