Thermal characterization of a double-gate silicon-on-insulator MOSFET

被引：8
|
作者：
Pandey, MK [1 ]
Sen, S [1 ]
Gupta, RS [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 03期
关键词：
D O I：
10.1088/0022-3727/32/3/023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A two-dimensional analytical model to study the behaviour of the device parameters in various temperature ranges is developed. The temperature dependences of the threshold voltage, drain current and channel transconductance are modelled using temperature-sensitive parameters. The effects of temperature on the cut-off frequency and channel-transit time are also discussed. The results so obtained are compared with the experimental data for a single-gate silicon-on-insulator MOSFET.
引用
收藏
页码：344 / 349
页数：6
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