Y2SiO5:Ce thin films grown by PLD

Process parameters for pulsed laser deposition (PLD) (KrF laser, 248 nm on a silicon (Si)(100) substrate) of uniform cerium doped yttrium silicate (Y2SiO5:Ce) phosphor thin films were investigated for application in field emission displays (FEDs). An increase in the oxygen (O-2) ambient pressure to 1 Tort resulted in the growth of a nano phosphor thin layer. Surface morphology that was monitored with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM) yielded a rougher surface on the nano particle thin film due to the spherically shaped nano particles. Cathodoluminescence (CL) spectroscopy that was done with 2 keV energy electrons (20 mu A beam current) on the nano particle film, indicated a more intense CL intensity than the uniform thin film that was grown in vacuum, (5 x 10(-6) Torr). The two main CL peaks on the nano particle film ate situated at 438 and 468 nm (blue light) due to the 5d to 4f (F-2(5/2) and F-2(7/2)) transitions in Ce3+. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.