2.2um BSI CMOS image sensor with two layer photo-detector

被引：2
|
作者：
Sasaki, H. [1 ]
Mochizuki, A. [1 ]
Sugiura, Y. [1 ]
Hasumi, R. [1 ]
Eda, K. [1 ]
Egawa, Y. [1 ]
Yamashita, H. [1 ]
Honda, K. [1 ]
Ohguro, T. [1 ]
Momose, H. S. [1 ]
Ootani, H. [1 ]
Toyoshima, Y. [1 ]
Asami, T. [1 ]
机构：
[1] Toshiba Corp Semicond & Storage Prod Co, Kawasaki, Kanagawa 2128583, Japan
来源：
Image Sensors and Imaging Systems 2015 | 2015年 / 9403卷
关键词：
image sensor; BSI; two-layer photo-detector; color signal variation;
D O I：
10.1117/12.2077122
中图分类号：
TP7 [遥感技术];
学科分类号：
081102 ; 0816 ; 081602 ; 083002 ; 1404 ;
摘要：
Back Side Illumination (BSI) CMOS image sensors with two-layer photo detectors (2LPDs) have been fabricated and evaluated. The test pixel array has green pixels (2.2um x 2.2um) and a magenta pixel (2.2um x 4.4um). The green pixel has a single-layer photo detector (1LPD). The magenta pixel has a 2LPD and a vertical charge transfer (VCT) path to contact a back side photo detector. The 2LPD and the VCT were implemented by high-energy ion implantation from the circuit side. Measured spectral response curves from the 2LPDs fitted well with those estimated based on light-absorption theory for Silicon detectors. Our measurement results show that the keys to realize the 2LPD in BSI are; (1) the reduction of crosstalk to the VCT from adjacent pixels and (2) controlling the backside photo detector thickness variance to reduce color signal variations.
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页数：6
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