Band selection filter for ultra-wideband/Ku dual-band low-noise amplifier in the CMOS process

This work proposes a band selection filter (BSF) for a fully integrated ultra-wideband (UWB) 3.1-10.6 GHz/Ku band 11.8-14.8 GHz dual-band low-noise amplifier (LNA) in 0.13 mu m CMOS technology. Detailed analysis and design criteria of the proposed BSF and wideband LNA are given. The operating frequency band can be selected by the transistor M-n between its off and on states. The BSF is designed, analysed and fabricated in a 0.18 mu m CMOS process to verify its feasibility. The BSF has a minimum insertion loss of 0.7/2.9 dB for a low-pass and high-pass filter, and an input-referred IP3 (IIP3) exceeding 20/33 dBm in the off and on states. The measured performance of the switched LNA in UWB band achieves a maximum power gain of 12.3 dB and a 1-dB bandwidth of 2-10.5 GHz, a minimum noise figure (NF) of 4.9 dB and an IIP3 of -16.7 dBm. In Ku band, the measured performance are a maximum power gain of 10.7 dB with a 1-dB bandwidth of 11.5-13.5 GHz, a minimum NF of 5.7 dB and an IIP3 of -16.1 dBm. The dual-band LNA consumes a DC dissipation power of 14.3 mW from a 1.1 V supply voltage. The chip area, excluding pads, is only 0.35 mm(2).