Ion-implanted silicon detectors of nuclear radiation

被引：0

作者：

Yrchuk, SY ^{[1
]}

Kol'tsov, GI ^{[1
]}

Kuts, VA ^{[1
]}

机构：

[1] Technol Univ, Moscow State Inst Steel & Alloys, Moscow 117936, Russia

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The silicon detectors of nuclear radiation are produced by ion implantation. The comparison of the characteristics of detectors conducted by various ways and with use of different modes was carried out. It was shown, that with use of optimum modes of manufacturing the detectors have good energy resolution. It was shown also, that the produced structures can work as photocells in pair with scintillator.

引用

页码：95 / 98

页数：4

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