Single-Electron Stochastic Resonance Using Si Nanowire Transistors

被引：18

作者：

Nishiguchi, Katsuhiko ^{[1
]}

Fujiwara, Akira ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 06期

关键词：

FIELD-EFFECT-TRANSISTOR; ROOM-TEMPERATURE; DEVICE;

D O I：

10.1143/JJAP.50.06GF04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). Input signal applied to a MOSFET modulates SE transport in an average manner based on nonlinear characteristics. On the other hand, an individual SE goes through the MOSFET in a completely random manner, which corresponds to shot noise. SEs transferred to a storage node are counted precisely by the other MOSFET and used as an output signal. The correlation between the input and output signals is improved by taking advantage of extrinsic noise as well as the intrinsic shot noise composed of SEs. It is confirmed that the shot-noise-assisted SR allows fast operation with a simple system. Pattern perception utilizing SR is also demonstrated. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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