MOSFETs reliability: Electron trapping in gate dielectric

被引：3

作者：

Soin, N ^{[1
]}

Zhang, JF ^{[1
]}

Groesenken, G ^{[1
]}

机构：

[1] Univ Malaya, Dept Elect, Kuala Lumpur 59100, Malaysia

来源：

2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SMELEC.2000.932443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a charge pumping technique has been used to measure hot-carrier degradation on n-MOSFET Charge pumping technique is a well established technique for the characterization of interface traps in MOS transistors. This technique is capable of independently providing the amount of interface traps generated during the infection and the sign and the amount of charges that have been trapped in the gate dielectrics. The analysis on the selection of charge pumping parameters has been done experimentally in order to select the appropriate value of charge pumping parameters before carried out any experiment in this paper. This paper presents a study on oxide damage due to the hot carrier degradation that has been carried out experimentally on five samples of n-MOSFETs with different type of dielectrics. The damages have been characterized in terms of oxide trapped and interface state density. A comparison of electron trapping in each type of dielectric is included in the discussion. Four types of oxynitrides with different growth conditions have been used. The interface trap generation is found to be suppressed by nitridation.

引用

页码：104 / 109

页数：6

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