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Ambipolar organic field-effect transistors based on a low band gap semiconductor with balanced hole and electron mobilities
被引:116
|作者:
Chikamatsu, Masayuki
Mikami, Takefumi
Chisaka, Jiro
Yoshida, Yuji
Azumi, Reiko
Yase, Kiyoshi
Shimizu, Akihiro
Kubo, Takashi
Morita, Yasushi
Nakasuji, Kazuhiro
机构:
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
[2] Osaka Univ, Grad Sch Sci, Dept Chem, Toyonaka, Osaka 5600043, Japan
关键词:
D O I:
10.1063/1.2766696
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The authors have demonstrated the thin-film properties and the ambipolar transport of a delocalized singlet biradical hydrocarbon with two phenalenyl radical moieties (Ph-2-IDPL). The organic field-effect transistors (OFETs) based on Ph-2-IDPL exhibit ambipolar transport with balanced hole and electron mobilities in the order of 10(-3) cm(2)/V s. The Ph-2-IDPL film is an organic semiconductor with a low band gap of 0.8 eV and has small injection barriers from gold electrodes to both the highest occupied molecular orbital and the lowest unoccupied molecular orbital. A complementary metal-oxide-semiconductor-like inverter using two identical Ph-2-IDPL based ambipolar OFETs shows a sharp inversion of the input voltage with high gain. (C) 2007 American Institute of Physics.
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