Plasma Etching Parameters Impact To Low-k Damage

被引：0
|
作者：
Zhang, Jihong [1 ]
Pei, Huiyuan [1 ]
Cheng, L. H. [1 ]
机构：
[1] Lam Res Shanghai Co Ltd, Shanghai 201203, Peoples R China
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期
关键词：
D O I：
10.1149/1.3567610
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Mechanical strength of low-k material greatly decreases; material composition change will also give dry etching a lot of problems which have never met before. This paper explores the approaches to solve new problems when plasma etching low-k material, such as avoiding low-k damage and other defects, keeping anisotropic and needed selectivity; finding out the process parameters with the biggest influence, such as gas species, pressure, RF frequency, power, etc. Applies the process trend to plasma etching low-k material (BD) of 40nm dual damascene trench etch and achieves the critical target.
引用
收藏
页码：395 / 398
页数：4
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