Trapping and detrapping kinetics in metal Gate/HfO2 stacks

被引：1
|
作者：
Mitard, J [1 ]
Leroux, C [1 ]
Ghibaudo, G [1 ]
Reimbold, G [1 ]
Garros, X [1 ]
Guillaumot, B [1 ]
Boulanger, F [1 ]
机构：
[1] CEA, LETI, F-38054 Grenoble, France
来源：
IPFA 2005: PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2005年
关键词：
D O I：
10.1109/IPFA.2005.1469151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：155 / 158
页数：4
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