Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

被引：0
|
作者：
Caldwell, Joshua D. [1 ]
Stahlbush, Robert E. [1 ]
Glembocki, Orest J. [1 ]
Hobart, Karl D. [1 ]
Imhoff, Eugene A. [1 ]
Tadjer, Marko J. [2 ]
Liu, Kendrick X. [1 ]
机构：
[1] Naval Res Lab, Silver Spring, MD 20910 USA
[2] Univ Maryland Baltimore Cty, Dept Elect Engn, Baltimore, MD 21228 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：411 / +
页数：2
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