Influence of pressure annealing on electrical properties of Mn implanted silicon

The effect of annealing at 610-720K under enhanced hydrostatic pressure (HP) on electrical properties of manganese implanted Czochralski grown silicon (CzSi:Mn) and floating zone grown silicon (FzSi:Mn) (doses up to 1 x 10(16)cm(-1), E= 160keV) was investigated by electrical C-V, I-V and admittance measurements. Mn+ implantation produces both donor-like and acceptor-like implantation-induced defects. The stress-induced decrease in the hole concentration was detected in CzSi implanted by Mn+ and annealed at temperatures 610-670 K. The effect of changing initial conductivity of CzSi:Mn samples of high concentration of interstitial oxygen, from p type to n type, due to thermal donors (TDs) generation has been observed. The electron concentration after type conversion depends on annealing conditions and Mn+ dose. The TDs generation has not been detected in FzSi:Mn samples containing lower oxygen concentration, however, the FzSi:Mn samples annealed at 720 K under 10(5) Pa for 10 h indicate at the implanted side the increased carrier concentration due to the defects produced by Mn+ implantation. The heat treatment of FzSi:Mn under HP at 720 K for 10h results in further increase of carrier concentration due to the defect generation. (c) 2007 Elsevier Ltd. All rights reserved.