Surface characteristics of indium-tin oxide cleaned by remote plasma

被引:6
|
作者
Kim, S [1 ]
Seo, H
Kim, Y
Kim, K
Tak, Y
Jeon, H
机构
[1] Hanyang Univ, Div Engn & Mat Sci, Seoul 133791, South Korea
[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[3] Pusan Natl Univ, Sch Mat Sci & Engn, Pusan 609735, South Korea
[4] LG Elect, LG Elect Inst Technol, OLED Div, Kumi 730030, South Korea
关键词
ITO; remote plasma; contaminants; work function; sheet resistance;
D O I
10.1143/JJAP.44.1041
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the remote oxygen and hydrogen plasma cleaning of indium-fin oxide and its surface electronic properties. Samples cleaned by hydrogen plasma after oxygen plasma cleaning showed the complete absence of surface contaminants while samples cleaned by only hydrogen or oxygen plasma showed some residual contaminants. Work function is mainly affected by oxygen plasma treatments while sheet resistance is more closely related to the removal of surface carbon contaminants. This study revealed that surface dipoles due to the O(-) ions are believed to have a more significant contribution to the change in work function than the reduction of Sn(4+).
引用
收藏
页码:1041 / 1044
页数:4
相关论文
共 50 条
  • [41] Serial evaluations at an indium-tin oxide production facility
    Cummings, Kristin J.
    Suarthana, Eva
    Edwards, Nicole
    Liang, Xiaoming
    Stanton, Marcia L.
    Day, Gregory A.
    Saito, Rena
    Kreiss, Kathleen
    AMERICAN JOURNAL OF INDUSTRIAL MEDICINE, 2013, 56 (03) : 300 - 307
  • [42] LARGE-SCALE SPUTTERING OF INDIUM-TIN OXIDE
    GILLERY, FH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 306 - 308
  • [43] ELECTROCHEMICAL AND SURFACE CHARACTERISTICS OF TIN OXIDE AND INDIUM OXIDE ELECTRODES
    ARMSTRONG, NR
    LIN, AWC
    FUJIHIRA, M
    KUWANA, T
    ANALYTICAL CHEMISTRY, 1976, 48 (04) : 741 - 750
  • [44] Mechanochemical synthesis of indium-tin oxide powder.
    Ivanov, E
    Grigorieva, TF
    MECHANICALLY ALLOYED, METASTABLE AND NANOCRYSTALLINE MATERIALS, PART 1, 1998, 269-2 : 241 - 246
  • [45] A sustainable approach to separate and recover indium and tin from spent indium-tin oxide targets
    Gu, Shuai
    Fu, Bitian
    Dodbiba, Gjergj
    Fujita, Toyohisa
    Fang, Baizeng
    RSC ADVANCES, 2017, 7 (82): : 52017 - 52023
  • [46] Thermolysis stoichiometries of surface bound organometallic complexes on indium-tin oxide substrates.
    Purvis, KL
    Lu, G
    Schwartz, J
    Bernasek, SL
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U469 - U470
  • [47] ELECTRICAL AND PHOTO-VOLTAIC CHARACTERISTICS OF INDIUM-TIN OXIDE-SILICON HETEROJUNCTIONS
    THOMPSON, WG
    ANDERSON, RL
    SOLID-STATE ELECTRONICS, 1978, 21 (04) : 603 - 608
  • [48] CHARACTERISTICS OF INDIUM-TIN OXIDE THIN-FILM ETCHED BY REACTIVE ION ETCHING
    YOKOYAMA, M
    LI, JW
    SU, SH
    SU, YK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B): : 7057 - 7060
  • [49] Surface modification and characterization of indium-tin oxide for organic light-emitting devices
    Zhong, Z. Y.
    Jiang, Y. D.
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2006, 302 (02) : 613 - 619
  • [50] Surface conditioning of indium-tin oxide anodes for organic light-emitting diodes
    Kim, JS
    Cacialli, F
    Friend, R
    THIN SOLID FILMS, 2003, 445 (02) : 358 - 366