共 50 条
- [33] Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3085 - 3088
- [34] Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire GALLIUM NITRIDE MATERIALS AND DEVICES III, 2008, 6894
- [35] Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission OPTOELECTRONIC MATERIALS AND DEVICES II, 2007, 6782
- [37] Spin Relaxation in InGaN Quantum Disks in GaN Nanowires NANO LETTERS, 2011, 11 (12) : 5396 - 5400
- [39] Optical properties of InGaN/GaN multi quantum well structures NITRIDE SEMICONDUCTORS, 1998, 482 : 631 - 636
- [40] Comparison of optical properties between GaN and InGaN quantum wells PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 287 - 290