Symmetrically tunable optical properties of InGaN/GaN multiple quantum disks by an external stress

被引：2
|
作者：
Shih, H. Y. [1 ]
Chen, Y. F. [1 ]
Lin, T. Y. [2 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[2] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Keelung 202, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期
关键词：
WELLS; STRAIN;
D O I：
10.1063/1.4709397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of an external stress on the optical properties of InGaN/GaN multiple quantum disks (MQDs) has been investigated. As a transversal force is applied on the MQDs, both photoluminescence and Raman scattering spectra are altered due to the piezoelectric potential accompanied by the quantum confined Stark effect. Quite interestingly, it is found that the optical spectra possess a sixfold symmetry about the c-axis. This intriguing phenomenon can be attributed to the inherent nature of hexagonal lattice as well as the good flexibility of the composite consisting of polydimethylsiloxane and MQDs. Our results can provide an alternative route to optimize and extend the application of nitride-based devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709397]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells
    Peng, Ruoshi
    Xu, Shengrui
    Zhang, Jinfeng
    Zhang, Jincheng
    Du, Jinjuan
    Zhao, Ying
    Fan, Xiaomeng
    Hao, Yue
    OPTICAL MATERIALS EXPRESS, 2018, 8 (06): : 1528 - 1535
  • [2] Optical properties of InGaN/GaN multiple quantum wells
    Allegre, J
    Lefebvre, P
    Juillaguet, S
    Camassel, J
    Knap, W
    Chen, Q
    Khan, MA
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1295 - 1298
  • [3] Optical properties of InGaN/GaN multiple quantum wells
    Lee, JI
    Lee, CM
    Leem, JY
    Lim, KS
    Han, IK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (03) : 386 - 389
  • [4] Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
    Monemar, B
    Paskov, PP
    Haratizadeh, H
    Pozina, G
    Bergman, JP
    Kamiyama, S
    Iwaya, M
    Amano, H
    Akasaki, I
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 63 - 67
  • [5] Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs
    Kim, DJ
    Moon, YT
    Song, KM
    Choi, CJ
    Ok, YW
    Seong, TY
    Park, SJ
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 : 368 - 372
  • [6] Optical properties in InGaN/GaN multiple quantum wells and blue LEDs
    Su, YK
    Chi, GC
    Sheu, JK
    OPTICAL MATERIALS, 2000, 14 (03) : 205 - 209
  • [7] Optical properties studies in InGaN/GaN multiple-quantum well
    Zhu, Lihong
    Liu, Baolin
    SOLID-STATE ELECTRONICS, 2009, 53 (03) : 336 - 340
  • [8] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks
    Lai, Yi-Chun
    Higo, Akio
    Kiba, Takayuki
    Thomas, Cedric
    Chen, Shula
    Lee, Chang Yong
    Tanikawa, Tomoyuki
    Kuboya, Shigeyuki
    Katayama, Ryuji
    Shojiki, Kanako
    Takayama, Junichi
    Yamashita, Ichiro
    Murayama, Akihiro
    Chi, Gou-Chung
    Yu, Peichen
    Samukawa, Seiji
    NANOTECHNOLOGY, 2016, 27 (42)
  • [9] Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates
    Jary, Vitezslav
    Hospodkova, Alice
    Hubacek, Tomas
    Hajek, Frantisek
    Blazek, Karel
    Nikl, Martin
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (06) : 974 - 977
  • [10] Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells
    Zhuang, Yi D.
    Lis, Szymon
    Bruckbauer, Jochen
    O'Kane, Simon E. J.
    Shields, Philip A.
    Edwards, Paul R.
    Sarma, Jayanta
    Martin, Robert W.
    Allsopp, Duncan W. E.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
12345