Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

被引：14
|
作者：
Kakushima, K. [1 ]
Okamoto, K. [1 ]
Adachi, M. [1 ]
Tachi, K. [1 ]
Song, J. [1 ]
Sato, S. [1 ]
Kawanago, T. [1 ]
Ahmet, P. [2 ]
Tsutsui, K. [1 ]
Sugii, N. [1 ]
Hattori, T. [2 ]
Iwai, H. [2 ]
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Frontier Res Ctr, Tokyo, Japan
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期
关键词：
high-k; flat band voltage; hard X-ray photoemission spectroscopy (HX-PES);
D O I：
10.1016/j.apsusc.2008.02.177
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The flat band voltage shifts of HfO(2)/SiO(2)/nSi capacitors with ultra-thin La(2)O(3) insertion at HfO(2)/SiO(2) interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La(2)O(3) insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO(2) and La(2)O(3) at SiO(2) interface can be estimated to be 0.40 V. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：6106 / 6108
页数：3
相关论文
共 50 条
  • [1] Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack
    Di, Ming
    Bersch, Eric
    Clark, Robert D.
    Consiglio, Steven
    Leusink, Gert J.
    Diebold, Alain C.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
  • [2] Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si
    Renault, O
    Samour, D
    Rouchon, D
    Holliger, P
    Papon, AM
    Blin, D
    Marthon, S
    THIN SOLID FILMS, 2003, 428 (1-2) : 190 - 194
  • [3] Band alignment of HfO2 on SiO2/Si structure
    Wang, Xiaolei
    Han, Kai
    Wang, Wenwu
    Xiang, Jinjuan
    Yang, Hong
    Zhang, Jing
    Ma, Xueli
    Zhao, Chao
    Chen, Dapeng
    Ye, Tianchun
    APPLIED PHYSICS LETTERS, 2012, 100 (12)
  • [4] Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications
    Rebiscoul, D.
    Favier, S.
    Barnes, J-P.
    Maes, J. W.
    Martin, F.
    MICROELECTRONIC ENGINEERING, 2010, 87 (03) : 278 - 281
  • [5] Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
    Kakushima, K.
    Okamoto, K.
    Adachi, M.
    Tachi, K.
    Ahmet, P.
    Tsutsui, K.
    Sugii, N.
    Hattori, T.
    Iwai, H.
    SOLID-STATE ELECTRONICS, 2008, 52 (09) : 1280 - 1284
  • [6] Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2
    Seguini, G.
    Curi, J. Llamoja
    Spiga, S.
    Tallarida, G.
    Wiemer, C.
    Perego, M.
    NANOTECHNOLOGY, 2014, 25 (49)
  • [7] Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack
    Wang, Xiaolei
    Han, Kai
    Wang, Wenwu
    Yang, Hong
    Zhang, Jing
    Ma, Xueli
    Xiang, Jinjuan
    Chen, Dapeng
    Ye, Tianchun
    APPLIED PHYSICS LETTERS, 2012, 100 (10)
  • [8] Dipole engineering at HfO2/SiO2 interface by ultra-thin Al2O3 to modulate flat-band voltage for cryogenic temperatures
    Huang, Ziqiang
    Liu, Tao
    Qian, Lewen
    Guo, Xinlong
    Liao, Meicheng
    Wang, Meng
    Xu, Saisheng
    Chen, Kun
    Wang, Chen
    Xu, Min
    Zhang, David Wei
    VACUUM, 2025, 234
  • [9] TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics
    陶芬芬
    杨红
    唐波
    唐兆云
    徐烨锋
    许静
    王卿璞
    闫江
    Journal of Semiconductors, 2014, 35 (06) : 36 - 41
  • [10] TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics
    Tao Fenfen
    Yang Hong
    Tang Bo
    Tang Zhaoyun
    Xu Yefeng
    Xu Jing
    Wang Qingpu
    Yan Jiang
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (06)
12345