Characterization of defect structures in nanocrystalline materials by X-ray line profile analysis

被引:51
|
作者
Gubicza, Jeno [1 ]
Ungar, Tamas [1 ]
机构
[1] Eotvos Lorand Univ, Inst Phys, Dept Mat Phys, H-1518 Budapest, Hungary
来源
ZEITSCHRIFT FUR KRISTALLOGRAPHIE | 2007年 / 222卷 / 11期
关键词
X-ray line profile analysis; nanomaterials; crystallite size; dislocations; planar defects;
D O I
10.1524/zkri.2007.222.11.567
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
X-ray line profile analysis is a powerful alternative tool for determining dislocation densities, dislocation type, crystallite and subgrain size and size-distributions, and planar defects, especially the frequency of twin boundaries and stacking faults. The method is especially useful in the case of submicron grain size or nanocrystalline materials, where X-ray line broadening is a well pronounced effect, and the observation of defects with very large density is often not easy by transmission electron microscopy. The fundamentals of X-ray line broadening are summarized in terms of the different qualitative breadth methods, and the more sophisticated and more quantitative whole pattern fitting procedures. The efficiency and practical use of X-ray line profile analysis is shown by discussing its applications to metallic, ceramic, diamond-like and polymer nanomaterials.
引用
收藏
页码:567 / 579
页数:13
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