In1-xMnxSb -: a narrow-gap ferromagnetic semiconductor

被引：63

作者：

Wojtowicz, T ^{[1
]}

Cywinski, G

Lim, WL

Liu, X

Dobrowolska, M

Furdyna, JK

Yu, KM

Walukiewicz, W

Kim, GB

Cheon, M

Chen, X

Wang, SM

Luo, H

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Elect Mat Program, Div Sci Mat, Berkeley, CA 94720 USA

[4] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 24期

关键词：

D O I：

10.1063/1.1583142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1-xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T-C ranging up to 8.5 K. The observed values of T-C agree well with the existing models of carrier-induced ferromagnetism. (C) 2003 American Institute of Physics.

引用

页码：4310 / 4312

页数：3

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