Chemical vapor deposition of copper with a new metalorganic source

Copper deposition based on a newly synthesized metalorganic compound shows promise for reproducible deposition which has been a major problem. The deposition can be carried out without adverse effect on the film qualities at the bubbler temperature of 65 degrees C. Preliminary deposition results reveal that the resistivity is 2.5 mu Omega cm in the deposition temperature range between 175 and 200 degrees C. Unlike (hfac)Cu . VTMS, the resistivity increases with increasing deposition temperature due to loose packing of the grains at higher temperatures. (C) 1996 American Institute of Physics.