Temperature-Dependent Rectifying and Ultraviolet Photoresponse Properties of Al-Doped ZnO/p-Si Heterojunction

被引：2
|
作者：
Zhao, Shenggui [2 ]
JingjingMa [1 ]
Cheng, Jiefei [2 ]
Luo, Bingcheng [1 ]
Xie, You [2 ]
Yan, Xiaole [2 ]
Hao, Limei [2 ]
Zhang, Tao [2 ]
Chen, Changle [1 ]
Jin, Kexin [1 ]
机构：
[1] Northwestern Polytech Univ, Sch Sci, Xian 710072, Peoples R China
[2] Xian Univ Sci & Technol, Sch Sci, Xian 710054, Peoples R China
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2015年 / 7卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Al-Doped ZnO Heterojunction; Rectifying Characteristics; Ultraviolet Photovoltage; ELECTRICAL-PROPERTIES; QUANTUM DOTS; ELECTROLUMINESCENCE; SCIENCE;
D O I：
10.1166/nnl.2015.1942
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This work explores the temperature dependent electrical and ultraviolet (UV) photoresponse properties of Al-doped ZnO/p-Si heterojunction grown by a laser molecular beam epitaxy technique. The heterojunction shows good diode characteristics with the rectification ratio of above 6 x 10(2) at 3 V at room temperature. The turn on voltages increase and the effects of series resistance become more obvious at lower temperature. The UV photovoltage characteristics are strongly depend on the temperature and the peak photovoltages increase from 1.56 to 5.36 V as the temperatures decrease from 300 to 180 K. These might be attributed to the shift of Fermi level of the heterojunction at low temperatures.
引用
收藏
页码：428 / 432
页数：5
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