Combined Genetic Programming and Neural Network Approaches to Electronic Modeling

An approach combining genetic programming (GP), neural network and electrical knowledge equations is presented for electronic device modeling. The proposed model includes a GP-generated symbolic function accurately representing device behavior within the training range, and a knowledge equation providing reliable tendencies of electronic behavior outside the training range. A correctional neural network is trained to align the knowledge equations with the GP-generated symbolic functions at the boundary of training data. The proposed method is more robust than the GP-generated symbolic functions alone because of improved extrapolation ability, and more accurate than the knowledge equations alone because of the genetic program's ability to learn non-ideal relationships inherent in the practical data. The method is demonstrated by applying it to a practical high-frequency, high-power transistor called a HEMT (High-Electron Mobility Transistor) used in wireless transmitters.