Development of a low noise readout ASIC for CZT detectors for gamma-ray spectroscopy applications

被引:6
|
作者
Luo, J. [1 ,2 ]
Deng, Z. [1 ,2 ]
Wang, G. [3 ]
Li, H. [3 ]
Liu, Y. [1 ,2 ]
机构
[1] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Key Lab Particle & Radiat Imaging, Minist Educ, Beijing 100084, Peoples R China
[3] Beijing Hamamatsu Photon Tech Co Ltd, Beijing 100070, Peoples R China
来源
关键词
VLSI circuits; Analogue electronic circuits; Front-end electronics for detector readout;
D O I
10.1088/1748-0221/7/08/P08030
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A multi-channel readout ASIC for pixelated CZT detectors has been developed for gamma-ray spectroscopy applications. Each channel consists of a low noise dual-stage charge sensitive amplifier (CSA), a CR-(RC)(4) semi-Gaussian shaper and a class-AB output buffer. The equivalent noise charge (ENC) of input PMOS transistor is optimized for 5 pF input capacitance and 1 mu s peaking time using g(m)/I-D design methodology. The gain can be adjusted from 100 mV/fC to 400 mV/fC and the peaking time can be adjusted from 1 mu s to 4 mu s. A 16-channel chip has been designed and fabricated in 0.35 mu m m 2P4M CMOS technology. The test results show that the chip works well and fully satisfies the design specifications. The ENC was measured to be 72 e + 26 e/pF at 1 mu s peaking time and 86 e + 20 e/pF at 4 mu s peaking time. The non-uniformity of the channel gain and ENC was less than +/- 12% and +/- 11% respectively for 16 channels in one chip. The chip was also tested with a pixelated CZT detector at room temperature. The measured energy resolution at 59.5 keV photopeak of Am-241 and (122)keV photopeak of Co-57 were 4.5% FWHM and 2.8% FWHM for the central area pixels, respectively.
引用
收藏
页数:12
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