Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

被引：10

作者：

Peng, Yue ^{[2
]}

Han, Genquan ^{[2
]}

Xiao, Wenwu ^{[1
]}

Wu, Jibao ^{[2
]}

Liu, Yan ^{[2
]}

Zhang, Jincheng ^{[2
]}

Hao, Yue ^{[2
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China

[2] Xidian Unvers, State Key Discipline Lab Wide Band Gap Semicond T, Sch Microelect, Xian 710071, Shaanxi, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期

基金：

中国国家自然科学基金;

关键词：

NEI; Ferroelectric; NC; Memory; Germanium; FeFET;

D O I：

10.1186/s11671-019-2943-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO2 nanocrystals embedded in amorphous Al2O3 is proved by polarization voltage measurements, piezoresponse force microscopy, and electrical measurements. The temperaturedependent performance and endurance behavior of a NEI negative capacitance FET (NCFET) are investigated. A FeFET with 3.6nmthick FE/DE achieves a memory window larger than 1 V, paving a pathway for ultimate scaling of FE thickness to enable three-dimensional FeFETs with very small fin pitch.

引用

页数：9

共 50 条

[1] Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
Yue Peng
Genquan Han
Wenwu Xiao
Jibao Wu
Yan Liu
Jincheng Zhang
Yue Hao
Nanoscale Research Letters, 2019, 14
[2] Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing
Peng, Yue
Xiao, Wenwu
Han, Genquan
Wu, Jibao
Liu, Huan
Liu, Yan
Xu, Nuo
Liu, Tsu-Jae King
Hao, Yue
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (01) : 9 - 12
[3] Silicon nanocrystal non-volatile memory for embedded memory scaling
Steimle, R. F.
Muralidhar, R.
Rao, R.
Sadd, M.
Swift, C. T.
Yater, J.
Hradsky, B.
Straub, S.
Gasquet, H.
Vishnubhotla, L.
Prinz, E. J.
Merchant, T.
Acred, B.
Chang, K.
White, B. E., Jr.
MICROELECTRONICS RELIABILITY, 2007, 47 (4-5) : 585 - 592
[4] The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications
Hou, CL
Lee, JYM
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 181 - 184
[5] Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior
Peng, Yue
Xiao, Wenwu
Han, Genquan
Liu, Yan
Wu, Jibao
Wang, Kuan
He, Yuhui
Yu, Zhihao
Wang, Xinran
Xu, Nuo
Liu, Tsu-Jae King
Hao, Yue
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (12) : 1933 - 1936
[6] Retention Analysis of a Non-Volatile Ferroelectric Memory Device
John, Caroline S.
Macleod, Todd C.
Evans, Joe
Ho, Fat D.
INTEGRATED FERROELECTRICS, 2012, 140 : 23 - 34
[7] Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications
Hoffman, J.
Hong, X.
Ahn, C. H.
NANOTECHNOLOGY, 2011, 22 (25)
[8] Non-volatile memory device using a polymer modified nanocrystal
Kiazadeh, A.
Gomes, H. L.
Rosa da Costa, A. M.
Moreira, J. A.
de Leeuw, D. M.
Meskers, S. C. J.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (19): : 1552 - 1555
[9] Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor
John, Caroline S.
Macleod, Todd C.
Evans, Joe
Ho, Fat D.
INTEGRATED FERROELECTRICS, 2014, 157 (01) : 23 - 30
[10] A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications
De Blauwe, J
Ostraat, M
Green, ML
Weber, G
Sorsch, T
Kerber, A
Klemens, F
Cirelli, R
Ferry, E
Grazul, JL
Baumann, F
Kim, Y
Mansfield, W
Bude, J
Lee, JTC
Hillenius, SJ
Flagan, RC
Atwater, HA
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 683 - 686

← 1 2 3 4 5 →